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| geometry process details principal device types 1n4933 thru 1n4937 1n4942 thru 1n4948 1n5615 thru 1n5623 cmr1f-02m series gross die per 4 inch wafer 4,250 process cpd24 fast recovery recti er 1 amp glass passivated recti er chip process glass passivated mesa die size 51 x 51 mils die thickness 11 mils anode bonding pad area 35 x 35 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? backside cathode r1 www.centralsemi.com r3 (29-april 2010)
process cpd24 typical electrical characteristics www.centralsemi.com r3 (29-april 2010) |
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